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| Shantou Huashan Electronic Devices Co.,Ltd. HFP830 N-Channel Enhancement Mode Field Effect Transistor General Description This Power MOSFET is produced using planar stripe, DMOS technology. This latest technology has been especially designed to minimize on-state resistance, have a high rugged avalanche characteristics. This devices is specially well suited for half bridge and full bridge resonant topolgy like a electronic lamp ballast. TO-220 1- G 2-D 3-S Features * 4.5A, 500V, RDS(on) = 1.5@VGS = 10 V * Fast switching * 100% avalanche tested * Improved dv/dt capability * Equivalent Type:IRF830 Maximum RatingsTa=25 unless otherwise specified T stg ----Storage Temperature ------------------------------------------------------ -55~150 T j ----Operating Junction Temperature ---------------------------------------------- -55~150 V DSS ---- Drain-Source Voltage ---------------------------------------------------------- 500V VDGR ---- Drain-Gate Voltage (RGS=1M) --------------------------------------------------------VGSS ---- Gate-Source Voltage -----------------------------------------------------------------------ID ---- Drain Current (Continuous) ------------------------------------------------------------------500V 20V 4.5A PD ---- Maximum Power Dissipation -------------------------------------------------------------- 75W IAR ---- Avalanche Current, Repetitive or Not-Repetitive (pulse width limited by Tj max, d < 1%) ---------------------------------------------------- 4.5 A EAS---- Single Pulse Avalanche Energy (starting Tj = 25, ID = IAR, VDD = 50 V) --------------------------------------------------270 mJ EAR---- Repetitive Avalanche Energy(pulse width limited by Tj max, d < 1%) --------------7.3mJ Thermal Characteristics Symbol Rthj-case Rthj-amb Rth c-s Items Thermal Resistance Junction-case Thermal Resistance Junction-ambient Thermal Resistance Case-sink TO-220 Max 1.71 Max 62.5 Typ 0.5 Unit /W /W /W Shantou Huashan Electronic Devices Co.,Ltd. HFP830 Unit V Conditions ID=250A ,VGS=0V VDS =500V, VGS=0V VDS=400V, VGS=0V,Tj=125 VGS= 20V , VDS =0V VDS = VGS , ID=250A VGS=10V, ID=2.5A VDS=40V, ID=2.5A Electrical CharacteristicsTa=25 unless otherwise specified Symbol Off Characteristics BVDSS IDSS Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current 500 25 250 A A nA V Items Min. Typ. Max. IGSS Gate - Body Leakage On Characteristics VGS(TH) RDS(ON) Gate Threshold Voltage Static Drain-Source On-Resistance 2.0 100 4.0 1.5 S Forward Transconductance 2.5 Dynamic Characteristics and Switching Characteristics Ciss Input Capacitance Coss Crss Output Capacitance Reverse Transfer Capacitance Turn - On Delay Time Rise Time Turn - Off Delay Time Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge 22 12 10 gFS 800 200 60 30 30 55 30 pF pF pF nS nS nS nS nC nC nC VDS = 25 V, VGS = 0 V, f = 1.0 MHz td(on) tr td(off) tf Qg Qgs Qgd VDD = 200 V, ID = 2.5Apk RG= 15 VDS=0.8VDSS, ID=4.5A, VGS = 10 V Drain-Source Diode Characteristics and Maximun Ratings Continuous Source-Drain Diode IS Forward Current Pulsed Drain-Source Diode ISM Forward Current Source-Drain Diode Forward VSD On-Voltage 4.5 18 1.5 A A V IS=4.5A,VGS=0 Shantou Huashan Electronic Devices Co.,Ltd. HFP830 Typical CharacteristicsTa=25 unless otherwise specified Shantou Huashan Electronic Devices Co.,Ltd. HFP830 Typical CharacteristicsTa=25 unless otherwise specified Shantou Huashan Electronic Devices Co.,Ltd. HFP830 Typical CharacteristicsTa=25 unless otherwise specified Shantou Huashan Electronic Devices Co.,Ltd. HFP830 Typical CharacteristicsTa=25 unless otherwise specified |
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